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PAM8009 document number: ds37224 rev. 1 - 2 1 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 3w stereo class-d audio amplifier and class ab headphone driver (dc volume, uvp and agc function) notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony- free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. description the PAM8009 is a 3w, class d audio-power amplifier for driving bridged-tied stereo speakers. advanc ed dc volume control minimizes external components and allows btl (speaker) volume control and se (headphone) volume control, the gain range is from +20db (volume=5v) to -60db (volume=0v) with 64 steps precise control. integrated power-limit technology suppresses the output signal clip automatically due to the over level input signal. this technology also offers low thd+n and protects speaker. integrated undervoltage protection (uvp) technology, external undervoltage detection can be used to shut down the PAM8009 before an input device can generate a pop. PAM8009 is available in so-24 and u-qfn4040-20. pin assignments PAM8009 xxxywwll bypass 4 routn 1 rinn 5 sd 3 p8009 xxxyw hp_rout 2 13 vdd 15 loutn 12 uvp 14 hp_lout 11 agc features ? operating voltage: 2.8v ~ 5.5v ? filter ? free and low emi ? low quiescent current ? idd=7ma @ vdd= 5v ? 64 steps dc volume control from -80db to +20db by dc voltage with hysteresis ? power limit function disable: 0.45vdd ~ vdd max. power: gnd ? uvp function disable: floating ? output power @ thd+n=1% btl mode vdd=5v, rl=4 ? ; po=2.4w vdd=5v, rl=8 ? ; po=1.4w se mode vdd=5v, rl=32 ? ; po=60mw ? output power @ thd+n = 10% btl mode vdd=5v, rl=4 ? ; po=3.0w vdd=5v, rl=8 ? ; po=1.7w ? input signal and headphone output signal in phase ? thermal and over-current protections with auto-recovery ? power enhance package so-24 and u-qfn4040-20 ? lead free and green devices available (rohs compliant) ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green device (note 3) applications ? lcd monitor / projects ? projects / all-in-one computers ? portable speakers ? portable dvd player / game machines
PAM8009 document number: ds37224 rev. 1 - 2 2 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 typical applications circuit pin descriptions package name function so-24 qfn-20 name 1 3 /sd full chip shutdown control input (active low) 2 4 bypass bias voltage for power amplifier 3 5 rin negative input of right channel power amplifier 4, 5, 20, 21 6, 18 gnd ground connection 6 7 lin negative input of left channel power amplifier 7 8 volume internal gain setting input connect to vdd which set max. gain = +20db 8 9 mute mute control signal input (active high) 9 10 se/ btl output mode control input high for se mode and low for btl mode 10 11 agc vdd ~ 0.45 x vdd or floati ng, disable the function 11 12 uvp under voltage protection input floating or pull high disable the function 12, 18, 23 13,16,20 vdd power 13 14 hp_lout headphone output of left channel power amplifier 14, 16 - n.c no connection 15 2 hp_rout headphone output of right channel power amplifier 17 15 loutn negative output of left channel power amplifier 19 17 loutp positive output of left channel power amplifier 22 19 routp positive output of right channel power amplifier 24 1 routn negative output of left channel power amplifier
PAM8009 document number: ds37224 rev. 1 - 2 3 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 functional block diagram absolute maximum ratings (@t a = +25c, unless otherwise specified.) (note 4) symbol parameter rating unit v dd supply voltage -0.3 to 6.0 v v dd input voltage -0.3 to v dd + 0.3 t j maximum junction temperature +150 c t stg storage temperature range - 65 to +150 t sdr maximum soldering temperature range, 5 seconds +300 notes: 4. stresses greater than the 'absolute maximum ratings ' specified above may cause permanent damage to the device. these are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. recommended operating conditions (@t a = +25c, unless otherwise specified.) symbol parameter max unit v dd supply voltage range 2.8 ~ 5.5 v v ih high level threshold voltage sd, mute 2 ~ v dd v se, btl 0.8 x v dd ~ v dd v v il low level threshold voltage sd, mute 0 ~ 0.8 v se, btl 0 ~ 1.0 v v icm common mode input voltage 1 ~ v dd - 1 v t a ambient operation temperature range -40 ~ + 85 c t j junction temperature range -40 + 125 thermal information (@t a = +25c, unless otherwise specified.) symbol parameter typical value unit ja thermal resistance ? junction to ambient so-24 qfn4040-20 +96 +45 c/w jc ambient operation temperature range so-24 qfn4040-20 +18 +7 c/w
PAM8009 document number: ds37224 rev. 1 - 2 4 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 electrical characteristics (@t a = +25c, v dd = 5v, gain = max., r l =8 ? , unless otherwise specified.) symbol parameter conditions min typ max units btl mode vdd supply voltage range - 2.8 - 5.5 v i q quiescent current (btl) v mute =0, v sd =5v, no load - 7 - ma i q quiescent current (se) v mute =0, v sd =5v, no load - 4 - ma i mute mute current (btl) v mute =0, v sd =5v, no load - 3 - ma i mute mute current (se) v mute =0, v sd =5v, no load - 4 - ma i sd shutdown current v mute =0, v sd =0v, no load - - 1 a f osc oscillator frequency - 200 250 300 khz ri input resistance (btl) gain=20db - - 33 k ? ri input resistance (se) gain=3.5db - - 56 k ? v os output offset voltage no load - 10 - mv r ds(on) drain ? source on-state resistance vdd=5.5v, ids=0.8a p mosfet - 0.26 - ? vdd=5.5v, ids=0.8a n mosfet - 0.19 - vdd=4.5v, ids=0.6a p mosfet - 0.28 - vdd=4.5v, ids=0.6a n mosfet - 0.21 - vdd=3.6v, ids=0.4a p mosfet - 0.29 - vdd=3.6v, ids=0.4a n mosfet - 0.21 - t start up startup time from shutdown bypass capacitor, cb=2.2uf - 1.72 - s po output power thd+n=10%, f=1khz, rl=8 ? 1.5 1.7 - w thd+n=10%, f=1khz, rl=4 ? 2.8 3.0 - thd+n total harmonic distortion plus noise rl=8 ? , po=0.8w, f=1khz - 0.08 - % rl=4 ? , po=1.6w, f=1khz - 0.08 - psrr power supply ripple rejection input ac-gnd, f=1khz, v pp =200mv - - 61 - db cs channel separation po=1w, f=1khz - -82 - db efficiency po=1.7w, f=1khz, rl=8 ? 85 90 - % po=3w, f=1khz, rl=4 ? 80 88 - v n noise input ac-gnd, a-weighting - 180 - uv non a-weighting - 270 - uv snr signal noise ratio f=20 ~ 20khz, thd=1% - 83 - db se mode vos output offset voltage no load - 2.5 - v po output power thd+n=1%, rl=32 ? , f=1khz - 60 - mw thd+n total harmonic distortion plus noise rl=32 ? , po=50mw, f=1khz - 0.02 - % psrr power supply ripple rejection input ac-gnd,f=1khz,vpp=200mv - 75 - db cs channel separation po=1w, f=1khz - -87 - db vn noise input ac-gnd, a-weighting - 74 - uv non a-weighting - 58 - uv snr signal noise ratio f=20 ~ 20khz, thd=1% - 89 - db control section v ih /sd input high - 1.4 - - v v il /sd input low - - - 0.6 v v mh mute input high - 1.4 - - v v ml mute input low - - - 0.6 v otp over temperature protection - - 150 - c oth over temperature hysteresis - - 108 - c
PAM8009 document number: ds37224 rev. 1 - 2 5 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 typical performance characteristics thd+n vs. output power 0.04 50 0.1 0.2 0.5 1 2 5 10 20 % 1m 5 2m 5m 10m 20m 50m 100m 200m 500m 1 2 w thd+n vs. frequency 0.03 10 0.05 0.1 0.2 0.5 1 2 5 % 20 20k 50 100 200 500 1k 2k 5k 10k hz 0.06 10 0.1 0.2 0.5 1 2 5 % 20 20k 50 100 200 500 1k 2k 5k 10k hz crosstalk vs. frequency v dd =5v r l =8 ? +33uh thd+n Q 10% av=20db aux-0025 aes-17(20khz) f= 100hz / 1khz / 10khz v dd =5v r l =4 ? +33uh thd+n Q 10% av=20db aux-0025 aes-17(20khz) f= 100hz / 1khz / 10khz v dd =5v r l =8 ? av=20db aux-0025 aes-17(20khz) po= 0.3w / 0.5w / 0.8w v dd =5v r l =4 ? av=20db aux-0025 aes-17(20khz) po= 0.5w / 1w / 1.5w -100 +0 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 d b 20 20k 50 100 200 500 1k 2k 5k 10k hz ttttt t tttttt tt ttttt tttt t tt ttttt tttt t t tt t tt tt t t tttttt t tttt tt ttttt t v dd =5v vo=1vrms r l =8 ? av=20db aux-0025 aes-17(20khz) r-channel to l-channel r-channel to l-channel -100 +0 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 d b 20 20k 50 100 200 500 1k 2k 5k 10k hz tt tt tt tt tt ttt ttttt t ttttt t tttt t t tttt ttt tttttt ttttt tttt t tttt t t v dd =5v vo=1vrms r l =4 ? av=20db aux-0025 aes-17(20khz) r-channel to l-channel r-channel to l-channel
PAM8009 document number: ds37224 rev. 1 - 2 6 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 typical performance characteristics (cont.) psrr vs. frequency output noise vs. frequency -120 +0 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 d b r a 20 20k 50 100 200 500 1k 2k 5k 10k hz -80 +0 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 d b 20 20k 50 100 200 500 1k 2k 5k 10k hz ttttt tt t t tttt ttttt t t t ttt t tt tttttt t t t ttt tt ttttttt ttttttttt tt ttt tt ttttttttt ttt ttt t tt tt v dd =5v r l =8 ? av=20db v rr =200mv pp aux-0025 aes-17(20khz) -80 +0 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 d b 20 20k 50 100 200 500 1k 2k 5k 10k hz tt ttt tt tt t tttt tttttttttt ttttttt ttttt ttt tttttt tt t t t tt tt t t tt t tttt t t tt ttttttt t t ttt t v dd =5v r l =4 ? av=20db v rr =200mv pp aux-0025 aes-17(20khz) -120 +0 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 d b r a 20 20k 50 100 200 500 1k 2k 5k 10k hz v dd =2.8v ~ 5.5v r l =8 ? +2*33uh av=20db input ac ground aux-0025 aes-17(20khz) v dd =2.8v ~ 5.5v r l =4 ? +2*33uh av=20db input ac ground aux-0025 aes-17(20khz) v dd = 2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v v dd = 2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v
PAM8009 document number: ds37224 rev. 1 - 2 7 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 typical performance characteristics (cont.) table 1 dc volume control
PAM8009 document number: ds37224 rev. 1 - 2 8 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 application information agc function when output reaches the maximum power-setting value, the internal programmable gain amplifier will decrease the gain to prevent the output waveform from clipping. this feature pr events speaker damage from occurring using the agc pin to set the agc function, limiting the output power. table 1: agc setting threshold vs. output agc function output power vdd ~ 0.45vdd or agc floating agc function disable 0.45vdd ~ 0.27vdd po=[[8(1/2vdd-vagc)^2]/rl] x 0.95 0.27vdd ~ gnd po=2.3w (max. output power 4 ? ) po=1.2w (max. output power 8 ? ) mute operation the mute pin is an input for controlling the class-d output st ate of the PAM8009. a logic low on this pin enables the outputs, and a logic high on this pin disables the outputs. this pin may be used to quickly disable or enable the outputs without a volume fade. quiescent c urrent is listed in the electrical characteristics table. the mute pin can be left floating due to the internal pull-down. shutdown operation in order to reduce power consumption while not in use, the PAM8009 contains shutdown circuit to tu rn off the amplifier?s bias c ircuit. the amplifier is turned off when logic low is placed on the /sd pin. when swit ching the /sd pin to low level, the amplifier enters a low-cons umption current status. the /sd pin can be left floating due to the internal pull-up. undervoltage protection external undervoltage detection can be used to shut down the PAM8009 before an input device can generate a pop. the shutdown th reshold at the uvp pin is 1.2v. the user selects a resistor divider to obtain the shutdown threshold and hyster esis for the specific applicati on. the threshold can be determined as below: with the condition: r3 >> r1//r2 v uvp = [1.2-(6ua x r3)] x (r1+r2)/ r2 hysteresis = 5ua x r3 x (r1+r2)/ r2 power supply decoupling the PAM8009 is a high performance cmos audio-amplifier that r equires adequate power supply decoupling to ensure the outputs of thd and psrr are as low as possible. power suppl y decoupling also prevents oscillation caused by long lead between the amplifier and th e speaker. the optimum decoupling is achieved by using two c apacitors of different types that target different types of noise on the power sup ply leads. for higher frequency transients, spikes, or digital has h on the line, a good low-equivalent-series- resistance (esr) ceramic-capacitor, typ ically 0.1uf is recommend, placing it as close as possible to the device?s v dd lead. for filtering lower-frequency noise signals, a large capacitor of 10uf or greater placed near the audio amplifier is recommended.
PAM8009 document number: ds37224 rev. 1 - 2 9 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 application information (cont.) input capacitor (ci) large input capacitors are both expensive and space hungry for portable designs. clearly , a certain sized capacitor is needed t o couple in low frequency without severe attenuation. but in many cases the speaker s used in portable systems, whet her internal or external, ha ve little ability to reproduce signals below 100hz to 150hz. thus, using a large-input- capacitor may not increase actual system performance. in this case, input capacitor (ci) and input resistance (ri) of the amplifier form a high-pass filter with the corner frequency determined equation below: fc = 1/ 2 ri x ci in addition to system cost and si ze, click and pop performance is affected by the size of the input coupling capacitor, ci. a l arger in/out coupling capacitor requires more charge to reach its quiescent dc voltage (normally 1/2 v dd ). this charge comes from the internal circuit via the feedback and is apt to create pops upon device enabling. thus, by minimi zing the capacitor size based on necessary low frequency respons e, turn on pop can be minimized. bypass capacitor (c byp ) bypass capacitor (c byp ) is the most critical capacitor and serves several important functions. during start-up or recovery from shutdown mode, c byp determines the rate at which the amplifier starts up. the se cond function is to reduce noise produced by the power supply caus ed by coupling into the output signal. the noise is from the internal analog reference to the amplifier, which appears as degraded psrr and th d+n. a ceramic bypass capacitor (c byp ) of 0.47uf to 1.0uf is recommended for the best thd and noise performance. increasing the bypass capacitor reduces clicking and popping noise from power on/off and entering and leaving shutdown. ordering information
PAM8009 document number: ds37224 rev. 1 - 2 10 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 marking information PAM8009 xxxywwll
PAM8009 document number: ds37224 rev. 1 - 2 11 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 package outline dimensions (all dimensions in mm.) please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. so-24 (type th) s e a t i n g p l a n e 1 d e t a i l ' a ' a 3 d a 1 a 2 a b e l l 1 0 . 2 5 0 c d e t a i l ' a ' h h u-qfn4040-20 so-24 (type th) dim min max typ a 2.36 2.64 2.54 a1 0.10 0.30 0.20 a2 2.26 2.35 2.30 a3 0.97 1.07 1.02 b 0.39 0.48 - c 0.25 0.31 - d 15.20 15.60 15.40 e 1.27bsc e 10.10 10.50 10.30 e1 7.40 7.60 7.50 h 0.25 0.75 - l 0.70 1.00 - l1 1.40 bsc 0 8 - all dimensions in mm u-qfn4040-20 dim min max typ a 0.55 0.65 0.60 a1 0 0.05 0.02 a3 - - 0.15 b 0.20 0.30 0.25 d 3.95 4.05 4.00 d2 2.40 2.60 2.50 e 3.95 4.05 4.00 e2 2.40 2.60 2.50 e 0.50 bsc l 0.35 0.45 0.40 z - - 0.875 all dimensions in mm d d2 e b l e2 a a1 a3 (pin #1 id) seating plane z(8x) e
PAM8009 document number: ds37224 rev. 1 - 2 12 of 12 www.diodes.com january 2015 ? diodes incorporated advanced information PAM8009 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2015, diodes incorporated www.diodes.com

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